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APT23F60B APT23F60S
600V,24A,0.29Max,trr 220ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT23F60B
APT23F60S
D
Single die FREDFET
G S
FEATURES
*FastswitchingwithlowEMI *Lowtrrforhighreliability *UltralowCrssforimprovednoiseimmunity *Lowgatecharge *Avalancheenergyrated *RoHScompliant
TYPICAL APPLICATIONS
* ZVSphaseshiftedandotherfullbridge *Halfbridge *PFCandotherboostconverter * Buckconverter *Singleandtwoswitchforward *Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 24 14 80 30 615 11
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 415 0.30 Unit W C/W
C oz g in*lbf N*m
04-2009 050-8141 Rev C
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ=25Cunlessotherwisespecified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 11A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT23F60B_S
Typ 0.57 0.23 4 -10 Max Unit V V/C V mV/C 250 1000 100 A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.29 5
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ=25Cunlessotherwisespecified
Test Conditions
VDS = 50V, ID = 11A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 22 4415 45 405 215
Max
Unit S
pF
VGS = 0V, VDS = 0V to 400V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 11A, VDS = 300V ResistiveSwitching VDD = 400V, ID = 11A RG = 4.7 6 , VGG = 15V
110 110 24 46 25 29 75 23 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 24
Unit
G S
A 80 1.0 220 400 0.73 1.79 7.3 10.2 20 V ns C A V/ns
ISD = 11A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 11A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 11A, di/dt 1000A/s, VDD = 400V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 10.17mH, RG = 25, IAS = 11A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
Rev C 04-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -4.28E-8/VDS^2 + 1.80E-8/VDS + 6.71E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
050-8141
80 70
V
GS
= 10V
35
T = 125C
J
APT23F60B_S
TJ = -55C
30
V
ID, DRAIN CURRENT (A)
ID, DRIAN CURRENT (A)
60 50 40 30 20 10 0
TJ = 150C TJ = 125C TJ = 25C
GS
= 7 &,10V
25 20 15 10 5 0 0
6V 6.5V
5.5V 5V
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure1,OutputCharacteristics
NORMALIZED TO VGS = 10V @ 11A
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure2,OutputCharacteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C TJ = 25C TJ = 125C
0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure3,RDS(ON)vsJunctionTemperature 35 30
TJ = -55C
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure4,TransferCharacteristics Ciss
6,000
gfs, TRANSCONDUCTANCE
20 15 10 5 0 0
TJ = 125C
C, CAPACITANCE (pF)
25
TJ = 25C
1000
100
Coss
Crss 10 15 20 ID, DRAIN CURRENT (A) Figure5,GainvsDrainCurrent
ID = 11A
5
25
10
100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure6,CapacitancevsDrain-to-SourceVoltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
80 ISD, REVERSE DRAIN CURRENT (A) 70 60 50 40 30 20 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure8,ReverseDrainCurrentvsSource-to-DrainVoltage 0 0
TJ = 150C TJ = 25C
VDS = 120V VDS = 300V
VDS = 480V
050-8141
20 40 60 80 100 120 140 160 Qg, TOTAL GATE CHARGE (nC) Figure7,GateChargevsGate-to-SourceVoltage
0
0
Rev C
04-2009
APT23F60B_S
100
IDM
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
10
Rds(on) 13s 100s 1ms 10ms
13s
1
Rds(on)
100s 1ms 10ms
1
TJ = 150C TC = 25C
100ms DC line
0.1
TJ = 125C TC = 75C
100ms DC line
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure10,MaximumForwardSafeOperatingArea
1
0.35 0.30 D = 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 10 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
0.3 SINGLE PULSE 0.1 0.05
-5
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration
10-4
1.0
TO-247(B)PackageOutline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAKPackageOutline
Drain (HeatSink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev C 04-2009
Gate Drain Source
HeatSink(Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
050-8141
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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